SM7341EHKP

www.sinopowersemi.com

3

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.4 - December, 2017

®

Symbol

Parameter

Test Conditions

Channel 1

Unit

Min.

Typ.

Max.

Static Characteristics

Drain-Source Breakdown Voltage

30

-

-

V

Drain-Source Breakdown Voltage

(transient)

34

-

-

V

Zero Gate Voltage Drain Current

-

-

1

mA

-

-

30

Gate Threshold Voltage

1.3

1.7

2.3

V

Gate Leakage Current

-

-

±10

mA

f

Drain-Source On-state Resistance

-

3.2

3.9

m

W

-

4.8

-

-

5

6.5

Gfs

Forward Transconductance

-

17

-

S

Diode Characteristics

f

Diode Forward Voltage

-

0.8

1.1

V

Reverse Recovery Time

-

28

-

ns

Charge Time

-

14

-

Discharge Time

-

14

-

Reverse Recovery Charge

-

13

-

nC

Dynamic Characteristics

g

Gate Resistance

-

1.6

-

W

Input Capacitance

Frequency=1.0MHz

-

925

-

pF

Output Capacitance

-

550

-

Reverse Transfer Capacitance

-

46

-

Turn-on Delay Time

-

11

-

ns

Turn-on Rise Time

-

9.6

-

Turn-off Delay Time

-

21

-

Turn-off Fall Time

-

19

-

Gate Charge Characteristics

g

Total Gate Charge

-

15

20

nC

Total Gate Charge

-

7

-

Threshold Gate Charge

-

1.7

-

Gate-Source Charge

-

2.2

-

Gate-Drain Charge

-

2.5

-

Note f：Pulse test ; pulse width

£300ms, duty cycle£2%.

Note g：Guaranteed by design, not subject to production testing.