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SM7312DHKP датащи(PDF) 2 Page - Sinopower Semiconductor Inc

номер детали SM7312DHKP
подробное описание детали  Dual N-Channel Enhancement Mode MOSFET
PDF  11 Pages
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производитель  SINOPWER [Sinopower Semiconductor Inc]
домашняя страница  http://www.sinopowersemi.com/Form2/index.aspx
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SM7312DHKP датащи(HTML) 2 Page - Sinopower Semiconductor Inc

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SM7312DHKP
Copyright © Sinopower Semiconductor Inc.
Rev. A.1 - January, 2019
www.sinopowersemi.com
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
2
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
Drain-Source Voltage
40
V
VGSS
Gate-Source Voltage
±20
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
IS
Diode Continuous Forward Current
TC=25°C
11.4
A
ID
Continuous Drain Current
TC=25°C
22 a
A
TC=100°C
22 a
IDM b
Pulsed Drain Current
TC=25°C
88
PD
Maximum Power Dissipation
TC=25°C
25
W
TC=100°C
10
RqJC
Thermal Resistance-Junction to Case
Steady state
5
°C/W
ID
Continuous Drain Current
TA=25°C
10.7
A
TA=70°C
8.5
IDM b
Pulsed Drain Current
TC=25°C
43
PD
Maximum Power Dissipation
TA=25°C
1.4
W
TA=70°C
0.9
RqJAc
Thermal Resistance-Junction to Ambient
t ≤ 10s
45
°C/W
Steady state
90
IAS d
Avalanche Current, Single pulse
L=0.1mH
28
A
EAS d
Avalanche Energy, Single pulse
L=0.1mH
39.2
mJ
Note a：Max. continuous current is limited by bonding wire.
Note b：Pulse width limited by max. junction temperature.
Note c：Surface mounted on 1in2 pad area, steady state t = 999s.
Note d：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).



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