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GD25Q80C датащи(PDF) 49 Page - GigaDevice Semiconductor (Beijing) Inc.

номер детали GD25Q80C
подробное описание детали  3.3V Uniform Sector Dual and Quad Serial Flash
PDF  67 Pages
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производитель  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
домашняя страница  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25Q80C датащи(HTML) 49 Page - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q80C
49
tDP
CS# High To Deep Power-Down Mode
20
μs
tRES1
CS# High To Standby Mode Without Electronic Signature
Read
20
μs
tRES2
CS# High To Standby Mode With Electronic Signature
Read
20
μs
tSUS
CS# High To Next Command After Suspend
20
μs
tRS
Latency Between Resume And Next Suspend
100
μs
tRST
CS# High To Next Command After Reset (Except From
Erase)
30
μs
tRST_E
CS# High To Next Command After Reset (From Erase)
12
ms
tW
Write Status Register Cycle Time
5
30
ms
tBP1
Byte Program Time (First Byte)
30
50
μs
tBP2
Additional Byte Program Time (After First Byte)
2.5
12
μs
tPP
Page Programming Time
0.6
2.4
ms
tSE
Sector Erase Time (4K Bytes)
45
150/300(1)
ms
tBE1
Block Erase Time (32K Bytes)
0.15
0.8/1.2(2)
s
tBE2
Block Erase Time (64K Bytes)
0.25
1.2/2.0(3)
s
tCE
Chip Erase Time (GD25Q80C)
4
10
s
Note:
1. Max Value 4KB tSE with<50K cycles is 150ms and >50K & <100k cycles is 300ms.
2. Max Value 32KB tBE with<50K cycles is 0.8s and >50K & <100k cycles is 1.2s.
3. Max Value 64KB tBE with<50K cycles is 1.2s and >50K & <100k cycles is 2.0s.
4. Typical values given for TA=25°C.
5. Value guaranteed by design and/or characterization, not 100% tested in production.



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