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AM29PDL640G датащи(PDF) 24 Page - SPANSION |
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AM29PDL640G датащи(HTML) 24 Page - SPANSION |
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24 / 61 page ![]() February 26, 2003 Am29PDL640G 23 P R E L I M INARY but can be programmed and locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the SecSi Sector. The SecSi Sector area can be protected using one of the following procedures: ■ Write the three-cycle Enter SecSi Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure Note:, except that RESET# may be at either V IH or VID. This allows in-system protection of the SecSi Sector Region without raising any device pin to a high volt- age. Note that this method is only applicable to the SecSi Sector. ■ To verify the protect/unprotect status of the SecSi Sector, follow the algorithm shown in Figure 3. Once the SecSi Sector is locked and verified, the sys- tem must write the Exit SecSi Sector Region com- mand sequence to return to reading and writing the remainder of the array. The SecSi Sector lock must be used with caution since, once locked, there is no procedure available for unlocking the SecSi Sector area and none of the bits in the SecSi Sector memory space can be modified in any way. SecSi Sector Protection Bit The SecSi Sector Protection Bit prevents program- ming of the SecSi Sector memory area. Once set, the SecSi Sector memory area contents are non-modifi- able. Figure 3. SecSi Sector Protect Verify Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes. In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during V CC power-up and power-down transitions, or from system noise. Low VCC Write Inhibit When V CC is less than VLKO, the device does not ac- cept any write cycles. This protects data during V CC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until V CC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when V CC is greater than V LKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE# = V IL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automati- cally reset to the read mode on power-up. COMMON FLASH MEMORY INTERFACE (CFI) The Common Flash Interface (CFI) specification out- lines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-inde- pendent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the sys- tem writes the CFI Query command, 98h, to address 55h, any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 10–13. To terminate reading CFI data, the system must write the reset command. The CFI Query mode is not accessible when the device is exe- Write 60h to any address Write 40h to SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 START RESET# = VIH or VID Wait 1 µs Read from SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 If data = 00h, SecSi Sector is unprotected. If data = 01h, SecSi Sector is protected. Remove VIH or VID from RESET# Write reset command SecSi Sector Protect Verify complete |
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