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PI608BZ датащи(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

номер детали PI608BZ
подробное описание детали  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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производитель  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
домашняя страница  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

PI608BZ датащи(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

  PI608BZ Datasheet HTML 1Page - NIKO SEMICONDUCTOR CO., LTD. PI608BZ Datasheet HTML 2Page - NIKO SEMICONDUCTOR CO., LTD. PI608BZ Datasheet HTML 3Page - NIKO SEMICONDUCTOR CO., LTD. PI608BZ Datasheet HTML 4Page - NIKO SEMICONDUCTOR CO., LTD.  
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REV1.0
2
H-29-5
N-Channel Enhancement Mode
Field Effect Transistor
PI608BZ
TO-251(IS)
Halogen-Free & Lead-Free
NIKO-SEM
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 15A
4.4
6
mΩ
VGS = 10V , ID = 20A
4.1
5.5
Forward Transconductance
1
gfs
VDS = 5V, ID = 20A
80
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 20V, f = 1MHz
3800
pF
Output Capacitance
Coss
406
Reverse Transfer Capacitance
Crss
313
Gate Resistance
Rg
VGS = 0V, VDS = 0V, f = 1MHz
1
Ω
Total Gate Charge
2
Qg(VGS=10V)
VDS = 20V , ID = 20A
77
nC
Qg(VGS=4.5V)
40
Gate-Source Charge
2
Qgs
11
Gate-Drain Charge
2
Qgd
18
Turn-On Delay Time
2
td(on)
VDS = 20V
ID  20A, VGS = 10V, RGEN =6Ω
25
nS
Rise Time
2
tr
18
Turn-Off Delay Time
2
td(off)
66
Fall Time
2
tf
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
3
IS
63
A
Forward Voltage
1
VSD
IF = 20A, VGS = 0V
1.3
V
Reverse Recovery Time
trr
IF = 20A, dlF/dt = 100A / S
19.3
nS
Reverse Recovery Charge
Qrr
7.8
nC
1Pulse test : Pulse Width
 300 sec, Duty Cycle  2％.
2Independent of operating temperature.
3Package limitation current is 55A.



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