PD632BA datasheet(1/4 Pages) NIKOSEM

номер детали	PD632BA

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

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производитель	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.niko-sem.com

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REV1.1

1

G-36-5

N-Channel Enhancement Mode

Field Effect Transistor

PD632BA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

30V

3.7mΩ

105A

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

2

TC = 25 °C

ID

105

A

TC = 100 °C

66

Pulsed Drain Current

1

IDM

200

Avalanche Current

IAS

40

Avalanche Energy

L = 0.1mH

EAS

80

mJ

Power Dissipation

TC = 25 °C

PD

73

W

TC = 100 °C

29

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

1.7

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Package limitation current is 55A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.7

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

1

A

VDS = 20V, VGS = 0V, TJ = 125 °C

10

Drain-Source On-State

Resistance1

RDS(ON)

VGS = 4.5V, ID = 30A

3.4

4.8

mΩ

VGS = 10V , ID = 40A

2.8

3.7

1. GATE

2. DRAIN

3. SOURCE

G

D

S

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