| поискавой системы для электроныых деталей |
|
PD618BA датащи(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
|
|
|||||||||||||||||||||||||||||
PD618BA датащи(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD. |
|
2 / 4 page ![]() REV 1.0 2 D-37-2 N-Channel Enhancement Mode Field Effect Transistor PD618BA TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance 1 gfs VDS = 5V, ID = 20A 60 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 1435 pF Output Capacitance Coss 259 Reverse Transfer Capacitance Crss 162 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.3 Ω Total Gate Charge 2 Qg(VGS=10V) VDS = 15V , ID = 20A 28.3 nC Qg(VGS=4.5V) 15.4 Gate-Source Charge 2 Qgs 3.5 Gate-Drain Charge 2 Qgd 7.7 Turn-On Delay Time 2 td(on) VDS = 15V ID 20A, VGS = 10V, RGEN =6Ω 35 nS Rise Time 2 tr 25 Turn-Off Delay Time 2 td(off) 70 Fall Time 2 tf 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current 3 IS 45 A Forward Voltage 1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 24 nS Reverse Recovery Charge Qrr 11 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3Package limitation current is 40A |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |