MP4020

2004-07-01

1

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type

(Fourd Darlington Power tTransistors in One)

MP4020

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching

• Small package by full molding (SIP 10 pins)

• High collector power dissipation (4-device operation)

• Zener diode included between collector and base

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

60 ± 10

V

Emitter-base voltage

8

V

DC

2

Collector current

Pulse

3

A

Continuous base current

0.5

A

Collector power dissipation

(1 device operation)

2.0

W

Collector power dissipation

(4 devices operation)

4.0

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-25A1A

Weight: 2.1 g (typ.)

2

1

R1 R2

9

10

R1 ≈ 5 kΩ

R2 ≈ 300 Ω

8

3

5

4

7

6