PC506BA datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV1.0

G-14-2

NIKO-SEM

N-Channel Enhancement Mode

Field Effect Transistor

PC506BA

SOT-89

Halogen-Free & Lead-Free

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

0.8

1.6

2.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

A

VDS = 24V, VGS = 0V, TJ = 55 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 1.5A

100

mΩ

VGS = 10V, ID = 3A

Forward Transconductance

gfs

VDS = 5V, ID = 3A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 15V, f = 1MHz

243

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

Total Gate Charge

Qg(VGS=10V)

VDS = 15V, ID = 3A

5.4

Qg(VGS=4.5V)

3.1

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

Qgd

1.6

Turn-On Delay Time

td(on)

VDS = 15V

ID  3A, VGS = 10V, RGS = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage

VSD

IF = 3A, VGS = 0V

1.5

Reverse Recovery Time

trr

IF = 3A, dI/dt = 100 A/μs

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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