PC015BDA datasheet(2/4 Pages) NIKOSEM

номер детали	PC015BDA

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

производитель	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

домашняя страница	http://www.niko-sem.com

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2 / 4 page

REV1.0

H-30-1

N-Channel Enhancement Mode

Field Effect Transistor

PC015BDA

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 6A

225

450

mΩ

VGS = 10V, ID = 6A

220

300

Forward Transconductance

gfs

VDS = 10V, ID = 6A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

614

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

1.4

Total Gate Charge

VDS = 75V, VGS = 10V,

ID = 6A

Gate-Source Charge

Qgs

1.6

Gate-Drain Charge

Qgd

5.1

Turn-On Delay Time

td(on)

Rise Time

VDD = 75V,

Turn-Off Delay Time

td(off)

ID  6A, VGS = 10V, RGS = 6Ω

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

6.4

Forward Voltage

VSD

IF = 6A, VGS = 0V

1.3

Reverse Recovery Time

trr

IF = 6A, dI/dt=100A/μs

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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