OUT

S

V

Off Isolation

20 Log

V

§

·

˜

¨

¸

©

¹

GND

NETWORK

ANALYZER

S

D

50

Ÿ

50

Ÿ

0.1µF

Output

0 V

GND

OUTPUT

S

D

SEL

0.1 F

15

TMUX1101, TMUX1102

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SCDS410 – MARCH 2019

Product Folder Links: TMUX1101 TMUX1102

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8.5 Charge injection

The TMUX110x devices have a transmission-gate topology. Any mismatch in capacitance between the NMOS

and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the

gate signal. The amount of charge injected into the source or drain of the device is known as charge injection,

drain (D).

Figure 5. Charge-injection measurement setup

8.6 Off isolation

Off isolation is defined as the ratio of the signal at the drain pin (D) of the device when a signal is applied to the

the setup used to measure off isolation. Use off isolation equation to compute off isolation.

Figure 6. Off isolation measurement setup

(1)