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PD780 датащи(PDF) 5 Page - NEC

номер детали PD780
подробное описание детали  HIGH·PERFORMANCE CP/M® ·COMPATIBLE NMOS 8·BIT MICROPROCESSOR
PDF  24 Pages
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производитель  NEC [NEC]
домашняя страница  http://www.nec.com/
Logo NEC - NEC

PD780 датащи(HTML) 5 Page - NEC

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t-IEC
Architecture
The architecture includes a dual set of six 8-bit general­
purpose registers and two a-bit accumulators and flag
registers. A flexible vectored interrupt structure is sup­
ported by an 8-bit interrupt vector register that pro­
vides the most-significant 8 bits of a pointer to a table
of vector addresses, while the requesting device
generates the least-significant 8 bits of the pointer.
Two 16-bit index registers enable the manipulation of
tabular data as well as facilitating code relocation.
Multilevel interrupts as well as virtually unlimited sub­
routine nesting are supported by a 16-bit stack pointer
and complimentary 16-bit program counter, enhanc­
ing the speed and efficiency of a wide variety of data­
handling operations. Processing efficiency is addi­
tionally supported by a special memory refresh regis­
ter that enables automatic refreshing of all external
dynamic memory with minimal processor overhead.
The dual set of general-purpose registers may be used
as individual 8-bit registers or paired as 16-bit regis­
ters. The dual register set (including a dual accumula­
tor and flag register) not only allows more powerful
addressing and data transfer operations, but also per­
mits programming in foreground/background mode
for vastly improved throughput.
Standard Test Conditions
The standard test conditions reference all voltages to
ground (0 V) and follow the convention that positive
current flows into the referenced pin. The listing of
AC parameters is based on a load capacitance of 50
pF unless explicitly stated otherwise. For every 50 pF
increase in load capacitance there is a 10 ns delay,
up to a maximum increase of 200 pF for the data bus
and 100 pF for the address bus and the bus control
lines.
The operating temperature range is: O°C to +70°C;
+4.75
V :s; Vee :s; +5.25 V.
Absolute Maximum Ratings
TA = 25°C
Oper
a ting tempe
ra tu
re
Stor
a ge temper
a ture
Volt
age on
an
y
pin
Powe
r dissip
ation
Note:
(I) With respect to ground.
J.lPD780
DOC to+70°
C
-6 5°
C
to+ 15
C
-0.3
to+7 V (1 )
1.5
W
Comment: Exposing the device to stresses above those listed in
Absolute Maximum Ratings could cause permanent damage. The
device is not meant to be operated under conditions outside the
limits described in the operational sections of this specification.
Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Capacitance
TA = 25°C
Limns
Test
Parameter
Symbol
Min
Max
Unn
Condnlons
Clock ca p
acit
ance
35
pF le=1 MHz
Input ca pa cit
a nce
CIN
5
pF Unme
asured pins
Output
ca pa cit
ance CO
U
T
10
pF
returned to ground.
DC Characteristics
TA =
Do C to +70oe; Vcc
=
+5 V ± 5% unless
otherwise specified
Parameter
Clock input
low volt
age
Clock input
high
volt
age
Input low volt
age
I
nput high
volt
age
Output
low volt
age
Output high volt
age
Power suppl
y ,..POlSO
Current
,..POlSO-l
Input
le
a ka ge cu
rrent
Th
ree-st
a te output
le
a ka ge current in
flo
a t
Three-st
ate output
le
a ka ge current
in floa t
Da ta
bus le
a ka ge
cu
r
rent in input
mode
Limits
Symbol
Min
"Jyp
VILC
-0.3
VIHC
Vee
-0.6
VIL
-0.3
VIH
2.0
VOL
VOH
2.4
Icc
lee
90
'll
'LDH
'LOL
ILO
Test
Max
Unn
Condnlons
0.45 V
Vee
V
+0.3
O.S
V
Vee
v
0.4
V
IOL=1
.S
mA
V
IOH= -250 ,..
A
15
0
rnA tC=400
ns
200
mA
te=250
ns
10
;tA VIN=O toVee
10
;tA VOUT=2.4
to
Vee
-1
0
;tA VOUT=O.4 V
±10 ;tA O:sVIN
:sVce
4-7



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