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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F030RC датащи(PDF) 62 Page - STMicroelectronics |
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STM32F030RC датащи(HTML) 62 Page - STMicroelectronics |
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62 / 93 page  Electrical characteristics STM32F030x4/x6/x8/xC 62/93 DS9773 Rev 4 All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 19 for standard I/Os, and in Figure 20 for 5 V tolerant I/Os. The following curves are design simulation results, not tested in production. Ilkg Input leakage current(2) TC, FT and FTf I/O TTa in digital mode VSS ≤ VIN ≤ VDDIOx -- ± 0.1 µA TTa in digital mode VDDIOx ≤ VIN ≤ VDDA -- 1 TTa in analog mode VSS ≤ VIN ≤ VDDA -- ± 0.2 FT and FTf I/O (3) VDDIOx ≤ VIN ≤ 5 V -- 10 RPU Weak pull-up equivalent resistor (4) VIN = VSS 25 40 55 k Ω RPD Weak pull-down equivalent resistor(4) VIN = VDDIOx 25 40 55 k Ω CIO I/O pin capacitance - - 5 - pF 1. Data based on design simulation only. Not tested in production. 2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 45: I/O current injection susceptibility. 3. To sustain a voltage higher than VDDIOx + 0.3 V, the internal pull-up/pull-down resistors must be disabled. 4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). Table 46. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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