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STM32F030CC датащи(PDF) 45 Page - STMicroelectronics |
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STM32F030CC датащи(HTML) 45 Page - STMicroelectronics |
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45 / 93 page ![]() DS9773 Rev 4 45/93 STM32F030x4/x6/x8/xC Electrical characteristics 75 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 22 are derived from tests performed under the ambient temperature condition summarized in Table 21. 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 23 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. VDDA Analog operating voltage Must have a potential equal to or higher than VDD 2.4 3.6 V VIN I/O input voltage TC and RST I/O -0.3 VDDIOx+0.3 V TTa I/O -0.3 VDDA+0.3(2) FT and FTf I/O -0.3 5.5(2) BOOT0 0 5.5 PD Power dissipation at TA = 85 °C for suffix 6 (1) LQFP64 - 455 mW LQFP48 - 364 LQFP32 - 357 TSSOP20 - 263 TA Ambient temperature for the suffix 6 version Maximum power dissipation -40 85 °C Low power dissipation(2) -40 105 TJ Junction temperature range Suffix 6 version -40 105 °C 1. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. 2. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.5: Thermal characteristics). Table 21. General operating conditions (continued) Symbol Parameter Conditions Min Max Unit Table 22. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 20 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 20 ∞ Table 23. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPOR/PDR(1) Power on/power down reset threshold Falling edge(2) 1.80 1.88 1.96(3) V Rising edge 1.84(3) 1.92 2.00 V |
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