2SC5980 datasheet(2/4 Pages) SANYO

номер детали	2SC5980

подробное описание детали	NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

PDF	4 Pages

Scroll/Zoom	100%

производитель	SANYO [Sanyo Semicon Device]

домашняя страница	https://www.sanyo-av.com/us/

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2 / 4 page

2SC5980

No.8091-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Gain-Bandwidth Product

VCE=10V, IC=500mA

330

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=3.5A, IB=175mA

125

190

IC=2A, IB=40mA

100

150

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=2A, IB=40mA

0.83

1.2

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0

100

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=100µA, RBE=∞

100

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0

Turn-ON Time

ton

See specified Test Circuit.

Storage Time

tstg

See specified Test Circuit.

420

Fall Time

See specified Test Circuit.

Package Dimensions

unit : mm

2045B

2044B

Switching Time Test Circuit

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

5.0

6.5

0.85

0.7

0.6

0.5

1.2

2.3

0.5

2.3

VCC=25V

IC=20IB1= --20IB2=2.5A

VBE= --5V

Ω

INPUT

OUTPUT

470

µF

100

µF

PW=20

µs

IB1

D.C.

≤1%

IB2

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

6.5

2.3

0.5

5.0

0.85

0.5

1.2

0 to 0.2

2.3

0.6

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