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2SC5850 датащи(PDF) 2 Page - Renesas Technology Corp |
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2SC5850 датащи(HTML) 2 Page - Renesas Technology Corp |
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2 / 6 page ![]() 2SC5850 Rev.1.00 Aug 10, 2005 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 50 V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 V IE = 10 µA, IC = 0 Collector cutoff current ICBO 0.5 µA VCB = 30 V, IE = 0 Emitter cutoff current IEBO 0.5 µA VEB = 2 V, IC = 0 DC current transfer ratio hFE* 1 100 500 VCE = 12 V, IC = 2 mA Collector to emitter saturation voltage VCE(sat) 0.2 V IC = 10 mA, IB = 1 mA Base to emitter voltage VBE 0.75 V VCE = 12 V, IC = 2 mA Notes: 1. The 2SC5850 is grouped by hFE as follows. Grade B C D Mark LB LC LD hFE 100 to 200 160 to 320 250 to 500 |
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