2SC4596 datasheet(1/1 Pages) MCC

номер детали	2SC4596

подробное описание детали	NPN Silicon Power Transistors

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производитель	MCC [Micro Commercial Components]

домашняя страница	http://www.mccsemi.com

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2SC4596

NPN Silicon

Power Transistors

Features

•

With TO-220Fa package

•

Amplifier applications

Maximum Ratings

Symbol

Rating

Unit

VCEO

Collector-Emitter Voltage

60

V

VCBO

Collector-Base Voltage

100

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current

5.0

A

PC

Collector power dissipation

25

W

TJ

Junction Temperature

-55 to +150

OC

TSTG

Storage Temperature

-55 to +150

OC

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=100mAdc, IB=0)

60

---

Vdc

ICBO

Collector-Base Cutoff Current

(VCB=100Vdc,IE=0)

---

10

uAdc

IEBO

Emitter-Base Cutoff Current

(VEB=5.0Vdc, IC=0)

---

1.0

mAdc

ON CHARACTERISTICS

hFE

Forward Current Transfer ratio

(IC=1.0Adc, VCE=2.0Vdc)

60

320

---

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=4.0Adc, IB=0.2Adc)

---

0.5

Vdc

VBE(SAT)

Base-Emitter Saturation Voltage

(IC=4.0Adc,IB=0.2Adc)

---

1.5

Vdc

omponents

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DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.02

.03

.60

.80

B

.29

.30

7.30

7.70

C

---

.67

---

17.00

D

.53

---

13.50

---

E

.16

4.0

G

---

.40

---

10.20

H

---

.22

---

5.70

I

.16

.17

4.00

4.40

J

.12

.13

3.00

3.20

K

---

.06

---

1.50

L

.03

.04

.70

.90

M

2.84

.11

2.24

2.84

N

.18

.22

4.58

5.58

O

---

.17

---

4.40

P

---

.11

---

2.90

Q

---

.02

---

.50

R

---

.06

---

1.50

∅

TO-220Fa

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