2SC4810 datasheet(2/6 Pages) NEC

номер детали	2SC4810

подробное описание детали	NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

PDF	6 Pages

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производитель	NEC [NEC]

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Data Sheet D15601EJ2V0DS

2SC4810

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to emitter voltage

VCEO(SUS)

IC = 5 A, IB = 5 mA, L = 180

µH

100

Collector to emitter voltage

VCEX(SUS)

IC = 5 A, IB = 5 mA

L = 180

µH, clamped

100

Collector cutoff current

ICBO

VCB = 100 V, IE = 0

1.0

µA

Emitter cutoff current

IEBO

VEB = 5 V, IC = 0

5.0

DC current gain

hFE1*VCE = 2.0 V, IC = 2.0 A

2,000

20,000

−

DC current gain

hFE2*VCE = 2.0 V, IC = 4.0 A

500

−

Collector saturation voltage

VCE(sat)*IC = 2.0 A, IB = 2.0 mA

0.9

1.5

Base saturation voltage

VBE(sat)*IC = 2.0 A, IB = 2.0 mA

1.5

2.0

Turn-on time

ton

0.5

µs

Storage time

tstg

2.5

µs

Fall time

IC = 2.0 A, IB1 =

−IB2 = 2.0 mA

RL = 25

Ω, VCC ≅ 50 V

Refer to the test circuit.

0.6

µs

* Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE1

2,000 to 5,000

4,000 to 10,000

8,000 to 20,000

PACKAGE DRAWING (UNIT: mm)

TAPING SPECIFICATION

Electrode Connection

1. Base

2. Collector

3. Emitter

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