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2SC4336 датащи(PDF) 2 Page - NEC

номер детали 2SC4336
подробное описание детали  NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PDF  5 Pages
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производитель  NEC [NEC]
домашняя страница  http://www.nec.com/
Logo NEC - NEC

2SC4336 датащи(HTML) 2 Page - NEC

  2SC4336 Datasheet HTML 1Page - NEC 2SC4336 Datasheet HTML 2Page - NEC 2SC4336 Datasheet HTML 3Page - NEC 2SC4336 Datasheet HTML 4Page - NEC 2SC4336 Datasheet HTML 5Page - NEC  
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Data Sheet D17261EJ1V0DS
2
2SC4336
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
VCEO(SUS)
IC = 5.0 A, IB = 0.6 A, L = 1 mH
100
V
VCEX(SUS)
IC = 5.0 A, IB1 =
−IB2 = 0.6 A,
VBE(OFF) =
−1.5 V, L = 180
µH, clamped
100
V
Collector Cut-off Current
ICBO
VCB = 100 V, IE = 0
10
µA
ICER
VCE = 100 V, RBE = 50
Ω, TA = 125°C
1.0
mA
ICEX1
VCE = 100 V, VBE(OFF) =
−1.5 V
10
µA
ICEX2
VCE = 100 V, VBE(OFF) =
−1.5 V,
TA = 125
°C
1.0
mA
Emitter Cut-off Current
IEBO
VEB = 5.0 V, IC = 0
10
µA
DC Current Gain
Note
hFE1
VCE = 2.0 V, IC = 1.0 A
100
hFE2
VCE = 2.0 V, IC = 2.0 A
100
200
400
hFE3
VCE = 2.0 V, IC = 6.0 A
60
Collector Saturation Voltage
Note
VCE(sat)1
IC = 6.0 A, IB = 0.3 A
0.3
V
VCE(sat)2
IC = 8.0 A, IB = 0.4 A
0.5
V
Base Saturation Voltage
Note
VBE(sat)1
IC = 6.0 A, IB = 0.3 A
1.2
V
VBE(sat)2
IC = 8.0 A, IB = 0.4 A
1.5
V
Collector Capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
120
pF
Gain Bandwidth Product
fT
VCE = 10 V, IC = 0.5 A
150
MHz
Turn-on Time
ton
0.3
µs
Storage Time
tstg
1.5
µs
Fall Time
tf
IC = 6.0 A, RL = 8.3
Ω,
IB1 =
−IB2 = 0.3 A, VCC ≅ 50 V
Refer to the test circuit.
0.3
µs
Note Pulsed: PW
≤ 350
µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
VCC
≅ 50 V
RL = 8.3
Ω
IB1
IB2
IC
IC
T.U.T.
VIN
PW
PW
≅ 50 s
VBB
≅ −5 V
Duty Cycle
≤ 2%
ton
tstg tf
90%
IB1
IB2
10%
Base current
waveform
Collector current
waveform
µ



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