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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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B772 датащи(PDF) 1 Page - NEC |
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B772 датащи(HTML) 1 Page - NEC |
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1 / 3 page  The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DATA SHEET Document No. D17118EJ2V0DS00 (2nd edition) (Previous No. TC-3569) Date Published March 2004 N CP(K) Printed in Japan c The mark shows major revised points. 2004 DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA = 25 °C) 1.0 W Total Power Dissipation (TC = 25 °C) 10 W Maximum Voltages and Currents (TA = 25 °C) VCBO Collector to Base Voltage −40 V VCEO Collector to Emitter Voltage −30 V VEBO Emitter to Base Voltage −5.0 V IC(DC) Collector Current (DC) −3.0 A IC(pulse) Note Collector Current (pulse) −7.0 A Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT DC Current Gain hFE1 VCE = −2.0 V, IC = −20 mA Note 30 220 DC Current Gain hFE2 VCE = −2.0 V, IC = −1.0 mA Note 60 160 400 Gain Bandwidth Product fT VCE = −5.0 V, IC = −0.1 A 80 MHz Output Capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 55 pF Collector Cutoff Current ICBO VCB = −30 V, IE = 0 A −1.0 µA Emitter Cutoff Current IEBO VEB = −3.0 V, IC = 0 A −1.0 µA Collector Saturation Voltage VCE(sat) IC = −2.0 A, IB = −0.2 A Note −0.3 −0.5 V Base Saturation Voltage VBE(sat) IC = −2.0 A, IB = −0.2 A Note −1.0 −2.0 V Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2% CLASSIFICATION OF hFE Rank R Q P E Range 60 to 120 100 to 200 160 to 320 200 to 400 Remark Test Conditions: VCE = −2.0 V, IC = 1.0 A PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 ±0.2 12 TYP. 2.3 TYP. 2.3 TYP. 1.2 TYP. 0.55 2.8 MAX. 0.8 +0.08 –0.05 +0.08 –0.05 1: Emitter 2: Collector: connected to mounting plane 3: Base |
Аналогичный номер детали - B772 |
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Аналогичное описание - B772 |
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