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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SA1845 датащи(PDF) 2 Page - NEC |
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2SA1845 датащи(HTML) 2 Page - NEC |
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2 / 6 page  Data Sheet D15592EJ2V0DS 2 2SA1845 ELECTRICAL CHARACTERISTICS (Ta = 25 °°°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = −100 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −100 V, REB = 50 Ω Ta = 125 °C −1.0 mA Collector cutoff current ICEX1 VCE = −100 V, VBE(off) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −100 V, VBE(off) = 1.5 V Ta = 125 °C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 100 − DC current gain hFE2* VCE = −2.0 V, IC = −1.0 A 100 400 − DC current gain hFE3* VCE = −2.0 V, IC = −3.0 A 60 − Collector saturation voltage VCE(sat)1* IC = −3.0 A, IB = −0.15 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −4.0 A, IB = −0.2 A −0.5 V Base saturation voltage VBE(sat)1* IC = −3.0 A, IB = −0.15 A −1.2 V Base saturation voltage VBE(sat)2* IC = −4.0 A, IB = −0.2 A −1.5 V Gain bandwidth product fT VCE = −10 V, IC = −0.5 A 150 MHz Collector capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 130 pF Turn-on time ton 0.3 µs Storage time tstg 1.4 µs Fall time tf IC = −3.0 A IB1 = −IB2 = −0.15 A RL = 16.7 Ω, VCC = −50 V 0.4 µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE 100 to 200 150 to 300 200 to 400 PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION Electrode Connection 1. Base 2. Collector 3. Emitter |
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