12FDR10 datasheet(2/6 Pages) NELLSEMI

2 / 6 page

SEMICONDUCTOR

RoHS

Nell High Power Products

FORWARD CONDUCTION

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

12FD(R)

Maximum average forward current

at case temperature

IF(AV)

180° conduction, half sine wave DC

IF(RMS)

Maximum RMS forward current

(1)

100

ºC

Maximum peak, one-cycle

non-reptitive surge current

IFSM

t = 10ms

t = 8.3ms

t = 10ms

= 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

No voltage

reapplied

100%VRRM

reapplied

No voltage

reapplied

100%VRRM

reapplied

I t

Sinusoidal half wave,

initial TJ = 150°C

170

180

145

(1)

150

145

134

105

A s

1452

t = 0.1 to 10 ms, no voltage reapplied

I √t

Maximum l²t for fusing

Maximum l²√t for fusing

A √s

Maximum on-state voltage

VFM

T = 25°C;

l = 12 A

(1)

1.4

RECOVERY CHARACTERISTICS

200

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

trr

Page 2 of 6

12FD(R)Series

T = 100°C;

= 38 A

(1)

1.5

IFM

trr

dir

Qrr

IRM(REC)

02 to 06

08 to 12

12FD(R)

500

200

500

THERMAL AND MECHANICAL SPECIFCATIONS

PARAMETER

SYMBOL

UNITS

TEST CONDITIONS

Maximum junction operating

temperature range

- 65 to150

ºC

0.5

K/W

Maximum thermal resistance,

junction to case

Maximum thermal resistance

case to heatsink

2.0

(13)

(10)

0.25

(lbf · in)

N · m

Allowable mounting torque

Approximate weight

Case style

DO-203AA (DO-4)

RthJC

RthCS

(lbf · in)

N · m

oz.

Not-lubricated threads

Lubricated threads

Mounting surface, smooth, flat and greased

DC operation

JEDEC

1.5

-10%

1.2

-10%

Maximum storage temperature range

Tstg

- 65 to175

www.nellsemi.com

(1) JEDEC registered values

Note

Maximum reverse recovery time

I =1A, I = 0.5A, I

= 0.25A

(RG#1 CKT)

T = 25°C,dl /dt = 25 A/µs,

= π x rated l

F(AV)

12FD(R)

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