MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

MTP200..D

UNIT

1900

08

900

1100

1300

1800

800

1000

1200

1600

18

12

10

16

1700

1800

800

1000

1200

1600

V

Maximum repetitive peak reverse voltage

Peak reverse non-repetitive voltage

Maximum DC blocking voltage

Maximum average forward rectified output current

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

RMS isolation voltage from case to leads

Operating junction storage temperature range

2

I t

2500

22100

200

2100

2

A s

A

A

V

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µA

SYMBOL

MTP200..D

UNIT

08

18

12

10

16

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

10

1.35

20

voltage per diod

TEST

CONDITIONS

I

= 200A

F

T

= 25°C

A

T

= 150°C

A

THERMAL AND MECHANICAC (T = 25°C unless otherwise noted)

A

PARAMETER

°C/W

SYMBOL

MTP200..D

UNIT

08

18

12

10

16

Typical thermal resistance

(1) With heatsink, single side heat dissipation, half sine wave.

(1)

0.10

Notes

Storage temperature range

ºC

TEST CONDITIONS

junction to case

Single-side heat dissipation, sine

half wave

Mounting

± 10 %

to heatsink M6

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the spread

of the compound.

5

Nm

to terminal M6

5

Approximate weight

300

torque

g

-

1

2

3

-

-

Package Outline: D type package

RRM

Device code

4

-

Voltage code: code x 100 = V

I

rating: "200" for 200A

F(AV)

(MTP20016D=MTP200-16)

Module type: “MTP” for 3

Bridge

Φ

2

MTP 200

16

3

1

D

4

mA

RoHS

RoHS

MTP200D Series

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