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TE28F320B3BC90 датащи(PDF) 29 Page - Intel Corporation

номер детали TE28F320B3BC90
подробное описание детали  3 Volt Advanced Boot Block Flash Memory
PDF  58 Pages
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производитель  INTEL [Intel Corporation]
домашняя страница  http://www.intel.com
Logo INTEL - Intel Corporation

TE28F320B3BC90 датащи(HTML) 29 Page - Intel Corporation

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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
3UHOLPLQDU\
23
4.5
AC Characteristics —Read Operations
NOTES:
1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.
2. Sampled, but not 100% tested.
See Figure 7, “AC Waveform: Read Operations” on page 26.
See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum allowable
input slew rate.
#
Sym
Parameter
Density
4/8 Mbit
Unit
Product
90 ns
110 ns
VCC
3.0 V–3.6 V
2.7 V–3.6 V
3.0 V–3.6 V
2.7 V–3.6 V
Min
Max
Min
Max
Min
Max
Min
Max
R1
tAVAV
Read Cycle Time
80
90
100
110
ns
R2
tAVQV
Address to Output Delay
80
90
100
110
ns
R3
tELQV
CE# to Output Delay(1)
80
90
100
110
ns
R4
tGLQV
OE# to Output Delay(1)
30
30
30
30
ns
R5
tPHQV
RP# to Output Delay
600
600
600
600
ns
R6
tELQX
CE# to Output in Low Z(2)
00
0
0
ns
R7
tGLQX
OE# to Output in Low Z(2)
00
0
0
ns
R8
tEHQZ
CE# to Output in High Z(2)
25
25
25
25
ns
R9
tGHQZ
OE# to Output in High Z(2)
25
25
25
25
ns
R10
tOH
Output Hold from Address,
CE#, or OE# Change,
Whichever Occurs First(2)
00
0
0
ns



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