ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µ

A

SYMBOL

MTPT200

UNIT

08

12

16

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

10

1.45

20

voltage per diod

TEST

CONDITIONS

I

= 200A

F

T

= 25°C

A

T

= 150°C

A

mA

Maximum Ratings for Diodes

FORWARD CONDUCTION

SYMBOL

TEST CONDITIONS

Maximum average on-state current

at case temperature

180° conduction, half sine wave ,50Hz

A

Maximum peak, one-cycle, on-state

non-repetitive surge current

t = 10 ms

No voltage

reapplied

Sine half wave,

t = 8.3 ms

t = 0.1 ms to 10 ms, no voltage reapplied

Maximum on-state voltage drop

Maximum holding current

mA

Maximum latching current

Anode supply = 6 V,

600

V

UNITS

VALUES

200

90

1900

1670

18.0

16.4

180.5

1.65

250

A

°C

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

2

kA √

12.7

11.6

reapplied

Maximum Ratings for Thyristor

SWITCHING

SYMBOL

TEST CONDITIONS

Typical delay time

Typical rise time

g

Typical tum-off time

I = 300A ; dl/dt = 15 A/µs ; T = T maximum,

TM

J

J

V = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω

R

μs

50 to 150

UNITS

V = 0.67 V

d

DRM

1

2

RoHS

RoHS

t = 10 ms

t = 8.3 ms

reapplied

No voltage

reapplied

1990

1596

PARAMETER

PARAMETER

VALUES

R =

33Ω,

G

Page 2 of 5

www.nellsemi.com

MTPT200 Series

s

MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

MTPT200

UNIT

08

900

1300

800

1200

1600

12

16

1700

Maximum repetitive peak reverse voltage

Peak reverse non-repetitive voltage

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

Operating junction temperature range

2

I t

25090

200

-40 to 150

2

A s

A

A

ºC

Storage temperature range

-40 to 125

ºC

Output DC current three-phase full wave, T = 100°C

c

ºC/W

ºC/W

Thermal Impedance, junction to case

Thermal Impedance, case to heatsink