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NKT55 датащи(PDF) 3 Page - Nell Semiconductor Co., Ltd

номер детали NKT55
подробное описание детали  Thyristor/Diode Power Modules
PDF  4 Pages
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производитель  NELLSEMI [Nell Semiconductor Co., Ltd]
домашняя страница  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

NKT55 датащи(HTML) 3 Page - Nell Semiconductor Co., Ltd

  NKT55 Datasheet HTML 1Page - Nell Semiconductor Co., Ltd NKT55 Datasheet HTML 2Page - Nell Semiconductor Co., Ltd NKT55 Datasheet HTML 3Page - Nell Semiconductor Co., Ltd NKT55 Datasheet HTML 4Page - Nell Semiconductor Co., Ltd  
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 150
°C
Maximum storage
temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to ca se per junction
RthJC
DC operation
°C/W
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface, smooth , flat and greased
Mounting
torque ± 10 %
AAP to heatsink, M6
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
busbar to AAP, M5
Approximate weight
120
4.23
Case style
ADD-A-PAK
°C
thCS
ORDERING INFORMATION TABLE
1
2
-
Current rating
: I
/
I
T
(AV)
F
(AV)
3
-
Voltage code x
100 = VRRM
oz.
g
0.1
0.35
N.m
4
Device code
NKT
55
/
16
3
2
1
-
Module type: NKT for (Thyristor + Thyristor) module
NKH for (Thyristor + Diode) module
Page 3 of 4
www.nellsemi.com
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
tp 5 ms, TJ = TJ maximum
10
W
Maximum average gate power
PG(AV)
f = 50 Hz, TJ = TJ maximum
3
Maximum peak gate current
IGM
tp 5 ms, TJ = TJ maximum
3
A
Maximum peak negative
gate voltage
- VGM
10
V
gate voltage
VGT
Anode supply = 6 V,
resistive load; Ra = 1
IGT
mA
Maximum gate voltage
that will not trigger
VGD
TJ = TJ maximum, 66.7% VDRM applied
0.25
Maximum gate current
that will not trigger
IGD
10
mA
Maximum rate of rise of
turned-on current
dI/dt
T = 25ºC ,I
= 1.5A ,t
≤ 0.5 µs
J
GM
r
150
A/μs
TRIGGERING
J
J
J = TJ
J
J
Maximum required DC
to trigger
a
Ω
Maximum required DC
gate current to trigger
= T
≤
≤
V
T = -40ºC
J
T = 25ºC
J
T = 125ºC
J
T = -40ºC
J
T = 25ºC
J
T = 125ºC
J
2.40
1.50
1.00
200
100
50
Nell High Power Products
NKT55/NKH55 Series RoHS
Apr 2017



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