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NKT55 датащи(PDF) 3 Page - Nell Semiconductor Co., Ltd |
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NKT55 датащи(HTML) 3 Page - Nell Semiconductor Co., Ltd |
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3 / 4 page ![]() THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range TJ - 40 to 150 °C Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to ca se per junction RthJC DC operation °C/W Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased Mounting torque ± 10 % AAP to heatsink, M6 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. busbar to AAP, M5 Approximate weight 120 4.23 Case style ADD-A-PAK °C thCS ORDERING INFORMATION TABLE 1 2 - Current rating : I / I T (AV) F (AV) 3 - Voltage code x 100 = VRRM oz. g 0.1 0.35 N.m 4 Device code NKT 55 / 16 3 2 1 - Module type: NKT for (Thyristor + Thyristor) module NKH for (Thyristor + Diode) module Page 3 of 4 www.nellsemi.com TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM tp 5 ms, TJ = TJ maximum 10 W Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 3 Maximum peak gate current IGM tp 5 ms, TJ = TJ maximum 3 A Maximum peak negative gate voltage - VGM 10 V gate voltage VGT Anode supply = 6 V, resistive load; Ra = 1 IGT mA Maximum gate voltage that will not trigger VGD TJ = TJ maximum, 66.7% VDRM applied 0.25 Maximum gate current that will not trigger IGD 10 mA Maximum rate of rise of turned-on current dI/dt T = 25ºC ,I = 1.5A ,t ≤ 0.5 µs J GM r 150 A/μs TRIGGERING J J J = TJ J J Maximum required DC to trigger a Ω Maximum required DC gate current to trigger = T ≤ ≤ V T = -40ºC J T = 25ºC J T = 125ºC J T = -40ºC J T = 25ºC J T = 125ºC J 2.40 1.50 1.00 200 100 50 Nell High Power Products NKT55/NKH55 Series RoHS Apr 2017 |
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