MBR3030CT thru MBR3045CT
Symbol
Characteristics
I(AV)
Maximum Average Forward Rectified Current
@TC=100 C
IFSM
Maximum Ratings
30
200
A
A
Unit
o
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=125 C
CJ
Typical Junction Capacitance Per Element (Note 3)
TJ
Operating Temperature Range
0.2
40
1.5
450
-55 to +150
-55 to +175
mA
pF
o
o
Typical Thermal Resistance (Note 2)
ROJC
C/W
o
C
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
High Tjm (+175
oC) Schottky Barrier Diodes
MBR3030CT
MBR3035CT
MBR3040CT
MBR3045CT
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
VDC
V
30
35
40
45
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt
Voltage Rate Of Change (Rated VR)
10000
V/us
C
o
TSTG
Storage Temperature Range
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* Plastic package has UL flammability classification 94V-0
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Maximum Forward
Voltage (Note 1)
IF=30A @TJ=125 C
IF=15A @TJ=25 C
IF=30A @TJ=25 C
VF
0.72
0.70
0.84
V
o
o
o
A=Anode, C=Cathode, TAB=Cathode
A
A
C
C(TAB)
A
C
A
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min.
Max.
12.70
13.97
14.73
16.00
9.91
10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Inches
Min.
Max.
0.500
0.550
0.580
0.630
0.390
0.420
0.139
0.161
0.230
0.270
0.100
0.125
0.045
0.065
0.110
0.230
0.025
0.040
0.100
BSC
0.170
0.190
0.045
0.055
0.014
0.022
0.090
0.110
Dimensions TO-220AB
DEECorp.
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