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25PT12AI-D датащи(PDF) 4 Page - Nell Semiconductor Co., Ltd

номер детали 25PT12AI-D
подробное описание детали  Stansard SCRs
PDF  6 Pages
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производитель  NELLSEMI [Nell Semiconductor Co., Ltd]
домашняя страница  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

25PT12AI-D датащи(HTML) 4 Page - Nell Semiconductor Co., Ltd

  25PT12AI-D Datasheet HTML 1Page - Nell Semiconductor Co., Ltd 25PT12AI-D Datasheet HTML 2Page - Nell Semiconductor Co., Ltd 25PT12AI-D Datasheet HTML 3Page - Nell Semiconductor Co., Ltd 25PT12AI-D Datasheet HTML 4Page - Nell Semiconductor Co., Ltd 25PT12AI-D Datasheet HTML 5Page - Nell Semiconductor Co., Ltd 25PT12AI-D Datasheet HTML 6Page - Nell Semiconductor Co., Ltd  
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Fig.7 Surge peak on-state current versus
number of cycles.
Fig.5 Relative variation of thermal
impedance versus pulse duration.
(TO-220AB ins / TO-220F)
0.01
l ,l ,l [T ] / l ,l ,l [T =25°C]
GT H L
j
GT H L
j
0.0
0.5
1.0
1.5
2.0
2.5
-40
100
Fig.8 Non-repetitive surge peak on-state
current , and corresponding values
2
of l t
50
0
1
10
100
1000
2000
100
1000
0.01
0.10
1.00
10.00
lGT
I
& I
H
L
T (°C)
j
-20
0
20
40
60
80
120
140
T =10ms
p
One cycle
Non repetitive
T initial = 25°C
j
Repetitive
T
= 83 °C
case
Number of cycles
100
150
200
250
300
350
lTSM
T initial = 25°C
j
2
l t
dl/dt
limitattion
Sinusoidal pulse width t (ms)
p
Fig.6 Relative variation of gate trigger
holding, and latching currents
versus junction temperature.
I
(A), l²t (A²s)
TSM
I
(A)
TSM
K=[Z /R ]
th
th
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Page 4 of 6
www.nellsemi.com
Fig.3 Average and DC on-state current
versus ambient temperature.
Fig.4 Relative variation of thermal impedance
versus pulse duration.(D²PAK, and
TO-220AB)
0.0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
l
(A)
T(AV)
0
25
50
75
100
125
K=[Z /R ]
th
th
1.00
0.10
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
α=180°
D.C.
TO-220AB
D²PAK
Z (j-c)
th
Z
(j-a)
th
t (s)
P
TO-220F
TO-220ABins
T
(°C)
amb
25PT Series RoHS
RoHS
0.10
1.00
10.00
Zth(j-c)
Zth(j-a)
t (s)
P



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