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ZXMN3B14F датащи(PDF) 2 Page - Zetex Semiconductors

номер детали ZXMN3B14F
подробное описание детали  30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
PDF  7 Pages
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производитель  ZETEX [Zetex Semiconductors]
домашняя страница  http://www.diodes.com/
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ZXMN3B14F датащи(HTML) 2 Page - Zetex Semiconductors

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ZXMN3B14F
SEMICO NDUC TORS
ISSUE 1 - JUNE 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R JA
125
°C/W
Junction to Ambient
(b)
R JA
83
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGS
12
V
Continuous Drain Current @ VGS=4.5V; TA=25°C
(b)
@VGS=4.5V; TA=70°C
(b)
@VGS=4.5V; TA=25°C
(a)
ID
3.5
2.9
2.9
A
A
A
Pulsed Drain Current
(c)
IDM
16
A
Continuous Source Current (Body Diode)
(b)
IS
2.4
A
Pulsed Source Current (Body Diode)
(c)
ISM
16
A
Power Dissipation at TA =25°C
(a)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA =25°C
(b)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Operating and Storage Temperature Range
Tj,Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS



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