ISCD127 datasheet(1/2 Pages) ISC

номер детали	ISCD127

подробное описание детали	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

1

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon PNP Darlington Power Transistor

ISCD127

DESCRIPTION

·

High DC Current Gain-

: hFE = 1000(Min)@ IC= -3A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -100V(Min)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.0V(Max)@ IC= -3A

= -4.0V(Max)@ IC= -5A

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

-8

A

IB

Base Current-DC

-120

mA

PC

Collector Power Dissipation

TC=25℃

65

W

Collector Power Dissipation

Ta=25℃

2

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.92

℃

/W

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