PAM2301

Document number: DS36384 Rev. 3 - 2

3 of 13

www.diodes.com

February 2018

© Diodes Incorporated

PAM2301

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability.

All voltages are with respect to ground.

Parameter

Rating

Unit

Input Voltage

-0.3 to +6.0

V

EN, FB Pin Voltage

V

SW Pin Voltage

V

Junction Temperature

+150

°C

Storage Temperature Range

-65 to +150

°C

Soldering Temperature

+300, 5s

°C

Parameter

Rating

Unit

Supply Voltage

2.5 to 5.5

V

Operation Temperature Range

-40 to +85

°C

Juntion Temperature Range

-40 to +125

Thermal Information

Parameter

Symbol

Max

Unit

Thermal Resistance (Junction to Case)

130

°C/W

Thermal Resistance (Junction to Ambient)

250

Internal Power Dissipation

400

mW

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Input Voltage Range

-

2.5

-

5.5

V

Regulated Feedback Voltage

-

0.588

0.600

0.612

V

Reference Voltage Line Regulation

-

-

0.3

-

%/V

Regulated Output Voltage Accuracy

-3

-

+3

%

Peak Inductor Current

-

1.2

-

A

Output Voltage Line Regulation

LNR

-

0.2

0.5

%/V

Output Voltage Load Regulation

LDR

-

0.5

1.5

%

Quiescent Current

No Load

-

40

70

µA

Shutdown Current

-

0.1

1.0

µA

Oscillator Frequency

1.2

1.5

1.8

MHz

-

500

-

kHz

Drain-Source On-State Resistance

P MOSFET

-

0.30

0.45

Ω

N MOSFET

-

0.35

0.50

Ω

SW Leakage Current

-

-

±0.01

1

µA

High Efficiency

η

-

-

96

-

%

EN Threshold High

-

1.5

-

-

V

EN Threshold Low

-

-

-

0.3

V

EN Leakage Current

-

-

±0.01

-

µA

Over Temperature Protection

OTP

-

-

+150

-

°C

OTH

-

-

+30

-

°C