IXFN38N100Q2 datasheet(1/4 Pages) IXYS

номер детали	IXFN38N100Q2

подробное описание детали	N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr

PDF	4 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

Logo

1 / 4 page

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1mA

1000

V

GS(th)

V

DS = VGS, ID = 8mA

2.5

5.0 V

I

GSS

V

GS = ±30 V, VDS = 0

±200 nA

I

DSS

V

DS = VDSS

T

J =

25°C

50 mA

V

GS = 0 V

T

J = 125°C

3 mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

0.25

Ω

Note 1

DS99027A(06/03)

HiPerFETTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g, Low Intrinsic Rg

High dV

/dt, Low t

rr

IXFN38N100Q2

V

DSS

= 1000 V

I

D25

=

38 A

R

DS(on)=

0.25

Ω

t

rr ≤

≤≤≤≤ 300 ns

Preliminary Data Sheet

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

1000

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

1000

V

GS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C

38

A

I

DM

T

C = 25°C, pulse width limited by TJM

152

A

I

AR

T

C = 25°C

38

A

E

AR

T

C = 25°C

60

mJ

E

AS

T

C = 25°C

5.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

20

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

890

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS, t = 1 minute

2500

V

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

30

g

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

•

Double metal process for low

gate resistance

•

miniBLOC, with Aluminium nitride

isolation

•

Unclamped Inductive Switching (UIS)

rated

•

Low package inductance

•

Fast intrinsic Rectifier

Applications

•

DC-DC converters

•

Switched-mode and resonant-mode

power supplies

•

DC choppers

•

Pulse generators

Advantages

•

Easy to mount

•

Space savings

•

High power density

Аналогичный номер детали - IXFN38N100Q2

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IXFN38N100Q2	566Kb / 3P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXFN38N100Q2	141Kb / 4P	HiPerFET Power MOSFET

More results

Аналогичное описание - IXFN38N100Q2

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFH14N100Q2	564Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
	IXFK38N80Q2	605Kb / 5P	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
	IXFT10N100	556Kb / 4P	N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
List of Unclassifed Man...	DE150-501N04A	77Kb / 3P	N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET
List of Unclassifed Man...	DE150-102N02A	77Kb / 3P	N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET
IXYS Corporation	IXFN100N25	78Kb / 2P	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low
	IXTH28N50Q	177Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXTQ24N55Q	517Kb / 2P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXFH36N55Q	171Kb / 4P	N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
	IXFT14N100	628Kb / 4P	N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

More results

IXFN38N100Q2 датащи(PDF) 1 Page - IXYS Corporation

IXFN38N100Q2 датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXFN38N100Q2

Аналогичное описание - IXFN38N100Q2

Html Pages

1 2 3 4

датащи скачать

ссылки URL