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BCR30AM-12LB датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали BCR30AM-12LB
подробное описание детали  isc Thyristors
PDF  1 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BCR30AM-12LB датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

  BCR30AM-12LB Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
BCR30AM-12LB
DESCRIPTION
·
With TO-220F packaging
·
Operating in 3 quadrants
·
High commutation capability
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·
Solid state relays;heating and cooking appliances
·
Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM
Repetitive peak off-state voltage
600
V
VRRM
Repetitive peak reverse voltage
600
V
IT(RSM)
Average on-state current
@Tc=92℃
30
A
ITSM
Surge non-repetitive on-state current
60HZ
300
A
PG(AV)
Average gate power dissipation ( over any 20 ms period )
0.5
W
Tj
Operating junction temperature
-40~150
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM Rated;
VD=VDRM Rated;
Tj=125℃
Tj=150℃
3000
5000
μ
A
IDRM
Repetitive peak off-state current
VTM
On-state voltage
IT=45A
1.5
V
IGT
Gate-trigger current
VD =6V;RL=6Ω;RG=330Ω
Ⅰ
50
mA
Ⅱ
50
Ⅲ
50
VGT
Gate-trigger voltage
VD =6V;RL=6Ω;RG=330Ω
2.5
V
Rth (j-c)
Junction to case
Half cycle
4.0
℃
/W


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