SSG4501-C datasheet(2/9 Pages) SECOS

2 / 9 page

SSG4501-C

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 7A, 30 V, RDS(ON) 28m

Ω

P-Ch: -5.3A, -30 V, RDS(ON) 50m

Ω

Elektronische Bauelemente

06-Dec-2018 Rev. B

Page 2 of 9

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

N-CHANNEL ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250uA

Breakdown Voltage Temp. Coefficient

△BVDS/△TJ

0.02

V/°C

Reference to 25°C , I D=1mA

Gate Threshold Voltage

VGS(th)

1.0

VDS=VGS, ID=250uA

Forward Transfer conductance

gfs

VDS=10V, ID=7A

Gate-Source Leakage Current

IGSS

±100

VGS = ±20V

Drain-Source Leakage Current

TJ=25°C

IDSS

VDS=30V, VGS=0

TJ=75°C

VDS=24V, VGS=0

Static Drain-Source On-Resistance 2

RDS(ON)

VGS=10V, ID=7A

VGS=4.5V, ID=5A

Total Gate Charge

8.4

ID=7A

VDS=24V

VGS=4.5V

Gate-Source Charge

Qgs

2.1

Gate-Drain (“Miller”) Change

Qgd

4.7

Turn-on Delay Time 2

Td(on)

VDD=15V

VGS=10V

ID=1A

RG=3.3

RD=15

Rise Time

5.2

Turn-off Delay Time

Td(off)

18.8

Fall Time

4.4

Input Capacitance

Ciss

645

VGS=0

VDS=25V

f=1.0MHz

Output Capacitance

Coss

150

Reverse Transfer Capacitance

Crss

Source-Drain Diode

Forward On Voltage 2

VSD

1.2

IS=7A, VGS=0, TJ=25°C

Continuous Source Current (Body Diode)

1.67

VD=VG=0V,VS=1.2V

Notes:

Pulse width limited by Max. Junction temperature.

Pulse width

300us , duty cycle

Surface mounted on 1 inch2 copper pad of FR4 board; 135 °C/W when mounted on min. copper pad.

SSG4501-C датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSG4501-C датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL