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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SMS2001-C датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SMS2001-C датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SMS2001-C -2A, -20V, RDS(O ) 200m P-Channel Enhancement Mode Power MOSFET 07-Dec-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS2001-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2001-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V TA=25°C -2 Continuous Drain Current, @VGS= -4.5V 1 TA=70°C ID -1.6 A Pulsed Drain Current 3 IDM -8 A Power Dissipation TA=25°C PD 1 W Operating Junction & Storage Temperature TJ, TSTG -55~150 °C Thermal Resistance Ratings t≦5sec, 125 Thermal Resistance Junction-ambient 1 Steady State, 250 Thermal Resistance Junction-ambient 2 RθJA 415 °C/W Part Number Type SMS2001-C Lead (Pb)-free and Halogen-free SOT-23 2001 Top View A L C B D G H J F K E 1 2 3 1 2 3 1 1 1 1 2 2 2 2 3 3 3 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.10 G 0 0.18 B 2.10 2.95 H 0.55 REF. C 1.20 1.7 J 0.08 0.20 D 0.89 1.3 K 0.6 REF. E 1.70 2.3 L 0.95 BSC. F 0.30 0.50 |
Аналогичный номер детали - SMS2001-C |
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Аналогичное описание - SMS2001-C |
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