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TSC966CW датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TSC966CW
подробное описание детали  NPN Silicon Planar High Voltage Transistor
PDF  5 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC966CW датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSC966CW
Taiwan Semiconductor
2
Version: F1801
ELECTRICAL SPECIFICATIONS (T
A = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
(Note 1)
Collector-Base voltage
IC =50μA
BVCBO
600
--
--
V
Collector-Emitter Saturation Voltage
IC =100μA, VBE =0
BVCES
600
--
--
V
Collector-Emitter breakdown voltage
IC =1mA
BVCEO
400
--
--
V
Emitter-Base breakdown voltage
IE =50μA
BVEBO
7
--
--
V
Emitter cut-off current
VEB =7V
IEBO
--
--
1.5
µA
Collector cut-off current
VCB =600V
ICBO
--
--
0.5
µA
Collector-Emitter Cutoff Current
VCE =400V
ICEO
--
--
1
µA
Collector-Emitter saturation voltage
IC =50mA, IB =5mA
VCE(SAT)
---
--
0.5
V
Base-Emitter saturation voltage
IC =50mA, IB =5mA
VBE(SAT)
--
--
1
V
DC Current Gain
VCE =5V, IC =1mA
hFE1
100
--
--
VCE =5V, IC =20mA
hFE2
90
--
300
Transition Frequency
VCE = 10V, IE =20mA
fT
50
--
--
MHz
Output Capacitance
VCB =20V, f =1MHz
Cob
--
--
7
pF
Notes:
1.
Pulse test:
≤ 380µs, duty cycle ≤ 2%
2.
For DESIGN AID ONLY, not subject to production testing.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSC966CW RPG
SOT-223
2,500pcs / 13
”Reel



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