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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HT15G-K датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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HT15G-K датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 7 page  HT11G-K - HT18G-K Taiwan Semiconductor 1 Version:B1705 1A, 50V - 1000V Glass Passivated High Efficient Rectifier FEATURES ● Glass passivated chip junction ● High current capability ● High reliability ● High surge current capability ● High efficiency, Low V F ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● High frequency rectification ● Freewheeling application ● Switching mode converters and inverters in computer and telecommunication. MECHANICAL DATA ● Case: TS-1 ● Molding compound meets UL 94V-0 flammability rating ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: As marked ● Weight: 0.2 g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) 1 A VRRM 50 - 1000 V IFSM 30 A TJ MAX 150 °C Package TS-1 Configuration Single Die TS-1 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL HT 11G-K HT 12G-K HT 13G-K HT 14G-K HT 15G-K HT 16G-K HT 17G-K HT 18G-K UNIT Marking code on the device HT11G HT12G HT13G HT14G HT15G HT16G HT17G HT18G Repetitive peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 210 280 420 560 700 V Forward current IF(AV) 1 A Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 30 A Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C |
Аналогичный номер детали - HT15G-K |
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Аналогичное описание - HT15G-K |
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ссылки URL |
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