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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MCT2 датащи(PDF) 3 Page - Infineon Technologies AG |
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MCT2 датащи(HTML) 3 Page - Infineon Technologies AG |
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3 / 6 page  2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA Phototransistor, Industry Standard www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–55 March 27, 2000-00 4N35/36/37/38—Characteristics TA=25°C * Indicates JEDEC registered value H11A1 through H11A5—Characteristics TA=25°C Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage* VF 0.9 1.3 1.5 1.7 V IF=10 mA IF=10 mA, TA=–55°C Reverse Current* IR 0.1 10 µA VR=6.0 V Capacitance CO 25 — pF VR=0, f=1.0 MHz Detector Breakdown Voltage, Collector-Emitter* 4N35/36/37 BVCEO 30 —— V IC=1.0 mA 4N38 80 —— Breakdown Voltage, Emitter-Collector* BVECO 7.0 —— V IE=100 µA Breakdown Voltage, Collector-Base* 4N35/36/37 BVCBO 70 —— V IC=100 µA, IB=1.0 µA 4N38 80 ——— Leakage Current, Collector-Emitter* 4N35/36/37 ICEO — 5.0 50 nA VCE=10 V, IF=0 4N38 —— 50 VCE=60 V, IF=0 Leakage Current, Collector-Emitter* 4N35/36/37 ICEO —— 500 µA VCE=30 V, IF=0, TA=100°C 4N38 — 6.0 — VCE=60 V, IF=0, TA=100°C Capacitance, Collector-Emitter CCE — 6.0 — pF VCE=0 Package DC Current Transfer Ratio* 4N35/36/37 CTR 100 —— % VCE=10 V, IF=10 mA, 4N38 20 —— VCE=1.0 V, IF=20 mA DC Current Transfer Ratio* 4N35/36/37 CTR 40 50 — % VCE=10 V, IF=10 mA, TA=–55 to 100°C 4N38 —— 30 —— Resistance, Input to Output* RIO 1011 —— Ω VIO=500 V Coupling Capacitance CIO — 0.5 — pF f=1.0 MHz Switching Time* tON, tOFF — 10 — µs IC=2.0 mA, RL=100 Ω, VCC=10 V Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage H11A1–H11A4 VF — 1.1 1.5 V IF=10 mA H11A5 — 1.1 1.7 Reverse Current IR —— 10 µA VR=3.0 V Capacitance C0 — 50 — pF VR=0, f=1.0 MHz Detector Breakdown Voltage, Collector-Emitter BVCEO 30 —— V IC=1.0 mA, IF=0 mA Breakdown Voltage, Emitter-Collector BVECO 7.0 —— V IE=100 µA, IF=0 mA Breakdown Voltage, Collector-Base BVCBO 70 —— V IC=10 µA, IF=0 mA Leakage Current, Collector-Emitter ICEO — 5.0 50 nA VCE=10 V, IF=0 mA Capacitance, Collector-Emitter CCE — 6.0 — pF VCE=0 Package DC Current Transfer Ratio H11A1 CTR 50 —— % VCE=10 V, IF=10 mA H11A2/3 20 —— H11A4 10 —— H11A5 30 —— Saturation Voltage, Collector-Emitter VCEsat —— 0.4 V ICE=0.5 mA, IF=10 mA Capacitance, Input to Output CIO — 0.5 — pF — Switching Time tON, tOFF — 3.0 — µs IC=2.0 mA, RL=100 Ω, VCE=10 V |
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