PDTC115ES datasheet(5/14 Pages) PHILIPS

номер детали	PDTC115ES

подробное описание детали	PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PDF	14 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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5 / 14 page

2004 Jul 30

Philips Semiconductors

Product speciﬁcation

PNP resistor-equipped transistors;

R1 = 100 k

Ω, R2 = 100 kΩ

PDTA115E series

THERMAL CHARACTERISTICS

Notes

1. Refer to standard mounting conditions.

2. Reflow soldering is the only recommended soldering method.

3. Refer to SOT883 standard mounting conditions; FR4 with 60

µm copper strip line.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT23

note 1

500

K/W

SOT54

note 1

250

K/W

SOT323

note 1

625

K/W

SOT346

note 1

500

K/W

SOT416

note 1

833

K/W

SOT490

notes 1 and 2

500

K/W

SOT883

notes 2 and 3

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −50 V; IE =0A

−−−100

ICEO

collector-emitter cut-off current

VCE = −30 V; IB =0A

−−−1

µA

VCE = −30 V; IB =0A;

Tj = 150 °C

−−−50

µA

IEBO

emitter-base cut-off current

VEB = −5 V; IC =0A

−−−50

µA

hFE

DC current gain

VCE = −5 V; IC = −5mA

−−

VCEsat

collector-emitter saturation voltage

IC = −5 mA; IB = −0.25 mA

−−−150

Vi(off)

input-off voltage

IC = −100 µA; VCE = −5V

−−1.2

−0.5

Vi(on)

input-on voltage

IC = −1 mA; VCE = −0.3 V

−3

−1.6

−

input resistor

100

130

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0 A; VCB = −10 V;

f = 1 MHz

−−

3pF

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