2004 Jul 30

2

Philips Semiconductors

Product specification

PNP resistor-equipped transistors;

R1 = 100 k

Ω, R2 = 100 kΩ

PDTA115E series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

PNP resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

collector-emitter

voltage

−−50

V

output current (DC)

−−20

mA

R1

bias resistor

100

−

k

Ω

R2

bias resistor

100

−

k

Ω

PRODUCT OVERVIEW

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER

PACKAGE

MARKING CODE

NPN COMPLEMENT

PHILIPS

EIAJ

PDTA115EE

SOT416

SC-75

5E

PDTC115EE

PDTA115EEF

SOT490

SC-89

6B

PDTC115EEF

PDTA115EK

SOT346

SC-59

62

PDTC115EK

PDTA115EM

SOT883

SC-101

F6

PDTC115EM

PDTA115ES

SOT54 (TO-92)

SC-43

TA115E

PDTC115ES

PDTA115ET

SOT23

−

*AB(1)

PDTC115ET

PDTA115EU

SOT323

SC-70

*7C(1)

PDTC115EU