MSM5117800D

8/14

Notes:

1.

A start-up delay of 200

ms is required after power-up, followed by a minimum of eight initialization

cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved.

2.

3.

4.

This parameter is measured with a load circuit equivalent to 2 TTL load and 100pF.

5.

6.

7.

condition and are not referenced to output voltage levels.

8.

9.

write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle.

the cycle is a read modify write cycle and data out will contain data read from the selected cell; if

neither of the above sets of conditions is satisfied, then the condition of the data out (at access time)

is indeterminate.

10. These parameters are referenced to the CAS leading edge in an early write cycle, and to the WE

leading edge in an OE control write cycle, or a read modify write cycle.

11. The test mode is initiated by performing a WE and CAS before RAS refresh cycle. This mode is

latched and remains in effect until the exit cycle is generated. The test mode specified in this data

sheets is a 2-bit parallel test function, CA0 and CA1 are not used. In a read cycle, if all internal bits

are equal, the DQ pin will indicate a high level. If any internal bits are not equal, the DQ pin will

indicate a low level. The test mode is cleared and the memory device returned to its normal

operating state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle.

12. In a test mode read cycle, the value of access time parameters is delayed for 5ns for the specified

value. These parameters should be specified in test mode cycle by adding the above value to the

specified value in this data sheet.