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SCESD0502L-C датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SCESD0502L-C
подробное описание детали  Ultra Low Capacitance TVS/ESD Protection Diode
PDF  2 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SCESD0502L-C датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SCESD0502L-C
60W, 5V
Ultra Low Capacitance TVS/ESD Protection Diode
11-Oct-2018 Rev. A
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Peak Pulse Power @tp=8/20µs
PPP
60
W
Air Discharge
IEC 61000-4-2
Contact Discharge
VESD
±20
kV
Operating Temperature
TOPT
-55~125
°C
Storage Temperature
TSTG
-55~150
°C
ELECTRICAL CHARACTERISTICS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reverse Working Voltage
VRWM
-
-
5
V
I/O-GND
Reverse Breakdown Voltage
VBR
6
-
-
V
IT=1mA
Between I/O and GND
Reverse Leakage Current
IR
-
-
100
nA
VRWM=5V
Between I/O and GND
-
-
10
IPP=1A, tp=8/20µs
Between I/O and GND
Clamping Voltage
VC
-
-
15
V
IPP=4A, tp=8/20µs
Between I/O and GND
Forward Voltage
VF
-
-
1.2
V
IT=10mA
Between I/O and GND
-
0.4
0.6
VR=0, f=1MHz
Between I/O and GND
Total Capacitance
CT
-
0.2
0.3
pF
VR=0, f=1MHz
Between I/O and I/O
CHARACTERISTICS CURVES



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