FEDD5117400F-01

1Semiconductor

MSM5117400F

8/15

Notes: 1. A start-up delay of 200

µs is required after power-up, followed by a minimum of eight initialization

cycles (

RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved.

4. -50 is measured with a load circuit equivalent to 2TTL load and 50pF, and -60/-70 is measured with a

load circuit equivalent to 2TTL load and 100pF.

are not referenced to output voltage levels.

write cycle and data out will contain data read from the selected cell; if neither of the above sets of

conditions is satisfied, then the condition of the data out (at access time) is indeterminate.

10. These parameters are referenced to the

CAS, leading edges in an early write cycle, and to the WE

leading edge in an

OE control write cycle, or a read modify write cycle.

11. The test mode is initiated by performing a

WE and CAS before RAS refresh cycle. This mode is

latched and remains in effect until the exit cycle is generated. In a test CA0, CA1 and CA10 are not

used and each DQ pin now access 8-bit locations. Since all 4 DQ pins are used, a total 32 data bits can

be written in parallel into the memory array. In a read cycle, if 8 data bits are equal, the DQ pin will

indicate a high level. If the 8 data bits are not equal, the DQ pin will indicate a low level. The test mode

is cleared and the memory device returned to its normal operating state by performing a

RAS-only

refresh cycle or a

CAS before RAS refresh cycle.

12. In a test mode read cycle, the value of access time parameter is delayed for 5ns for the specified value.

These parameters should be specified in test mode cycle by adding the above value to the specified

value in this data sheet.