CMBTA13 datasheet(1/2 Pages) RECTRON

номер детали	CMBTA13

подробное описание детали	NPN Small-Signal Darlington Transistors

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производитель	RECTRON [Rectron Semiconductor]

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UNIT

Value

Symbol

IC

Ptot

mA

Thermal Resistance

RthA

K/mW

from junction to Ambient

500

max 300

Collector current

Total power dissipation up to

Tamb = 25

oC

Junction Temperature

max 250

mW

Tj

max 150

oC

Storge Temperature

Tstg

-65 to +150

oC

V

Collector-base voltage (open collector)

VEBO

max 10

V

VCES

max 30

V

VBE = 0

oC

D.C. current gain

hFE

min 5000

IC = 10mA; VCE = 5V

Junction Temperature

Tj

max 150

MHZ

IC = 10mA; VCE = 5V

Symbol

Value

UNIT

VCES

max 30

V

VBE = 0

mW

Tamb = 25

oC

Collector current (d.c.)

IC

max 300

mA

Collector-emitter voltage (open base)

Total power dissipation up to

Ptot

max 250

Collector-emmitter voltage (open base)

Collector-base voltage (open emitter)

VCBO

max 30

VBE = 0

Transition frequency at f = 100MHZ

fT

min 125

NPN Small-Signal Darlington Transistors

CMBTA13

Ratings (at TA = 25

oC unless otherwise specified)

Limmiting values

Unit: inch (mm)

Pin configuration:

1. BASE

2. EMITTER

3. COLLECTOR

1

2

3

Absolute Maximum Ratings

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