ES1LD - ES1LJ

Taiwan Semiconductor

2

Version:A1608

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Lead Thermal Resistance

35

°C/W

Junction to Ambient Thermal Resistance

80

°C/W

Junction to Case Thermal Resistance

25

°C/W

Thermal Performance Note: Units mounted on recommended PCB (16mm x 16mm Cu test board)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Maximum instantaneous

forward voltage

(Note 1)

ES1LD

-

0.95

V

ES1LG

-

1.3

ES1LJ

-

1.7

Maximum reverse current

-

5

µA

-

100

µA

Junction capacitance

ES1LD

1 MHz,

16

-

pF

ES1LG

18

ES1LJ

18

Reverse recovery time

-

35

ns

Notes:

1.

Pulse test with PW=0.3 ms

2.

Pulse test with PW=30 ms