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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S1DFS датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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S1DFS датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  S1DFS - S1MFS Taiwan Semiconductor 1 Version:A1708 1A, 200V - 1000V Surface Mount Rectifier FEATURES ● Glass passivated junction chip ● Ideal for automated placement ● Low profile package ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● High frequency rectification ● Freewheeling application ● Switching mode converters and inverters in computer,automotive and telecommunication MECHANICAL DATA ● Case: SOD-128 ● Molding compound meets UL 94V-0 flammability rating ● Part no. with suffix "H" means AEC-Q101 qualified ● Packing code with suffix "G" means green compound (halogen-free) ● Moisture sensitivity level: level 1, per J-STD-020 ● Terminal: Mattle tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 0.027 g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) 1 A VRRM 200 - 1000 V IFSM 30 A TJ MAX 150 °C Package SOD-128 Configuration Single die SOD-128 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL S1DFS S1GFS S1JFS S1KFS S1MFS UNIT Marking code on the device S1DFS S1GFS S1JFS S1KFS S1MFS Repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 140 280 420 560 700 V Forward current IF(AV) 1 A Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 30 A Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C |
Аналогичный номер детали - S1DFS |
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Аналогичное описание - S1DFS |
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