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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L16B06G-R24-R датащи(PDF) 12 Page - Unisonic Technologies |
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L16B06G-R24-R датащи(HTML) 12 Page - Unisonic Technologies |
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12 / 13 page  L16B06 Preliminary CMOS IC UNISONIC TECHNOLOGIES CO., LTD 12 of 13 www.unisonic.com.tw QW-R502-A45.c POWER DI SSI PAT I ON The power dissipation of a semiconductor chip is limited to its package and ambient temperature, in which the device requires the maximum output current calculated for given operating conditions. The maximum allowable power consumption can be calculated by the following equation: TJ (Junction temperature)(max)(°C) – TA(Ambient Temperature) PD(max)(watt)= RTH (Junction - to – air thermal resistance)(°C/watt) The power consumption of IC can be determined by the following equation an should be less than the maximum allowable power dissipation: PD(W) = VCC(V) × IDD(A) + VOUT 0 × IOUT 0 × DUTY 0 + ….. + VOUT 15 × IOUT 15 × DUTY 15 ≤ PD (max)(W) T Y PI CAL APPLI CAT I ON |
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