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IXTP80N12T2 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали IXTP80N12T2
подробное описание детали  isc N-Channel MOSFET Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTP80N12T2 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IXTP80N12T2
·
FEATURES
·
Drain-Source On-Resistance: RDS(on)<17mΩ
·
With TO-220 packaging
·
High speed switching
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
PFC stages
·
LCD & PDP TV
·
Power supply
·
Switching applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
120
V
VGSS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous@Tc=25℃
Tc=100℃
10.4
6.6
A
IDM
Drain Current-Single Pulsed
80
A
PD
Total Dissipation
325
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.46
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
62.5
℃
/W


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