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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5755 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC5755 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5755 2002-07-22 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications · High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) · High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 2 Collector current Pulse ICP 3.5 A Base current IB 200 mA DC 500 Collector power dissipation t = 10 s PC (Note) 750 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 ¾ ¾ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ¾ ¾ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ¾ ¾ V hFE (1) VCE = 2 V, IC = 0.2 A 400 ¾ 1000 DC current gain hFE (2) VCE = 2 V, IC = 0.6 A 200 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 12 mA ¾ ¾ 0.12 V Base-emitter saturation voltage VBE (sat) IC = 0.6 A, IB = 12 mA ¾ ¾ 1.10 V Rise time tr ¾ 60 ¾ Storage time tstg ¾ 215 ¾ Switching time Fall time tf See Figure 1 circuit diagram. VCC ≈ 6 V, RL = 10 W IB1 = -IB2 = 12 mA ¾ 25 ¾ ns Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1C Weight: 0.01 g (typ.) |
Аналогичный номер детали - 2SC5755 |
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Аналогичное описание - 2SC5755 |
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