IXYS reserves the right to change limits, test conditions, and dimensions.

IXFC 52N30P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

DS

= 10 V; I

20

30

S

C

iss

3490

pF

C

oss

V

GS

= 0 V, V

550

pF

C

rss

130

pF

t

d(on)

24

ns

t

r

V

GS

= 10 V, V

22

ns

t

d(off)

R

G

= 4

Ω (External)

60

ns

t

f

20

ns

Q

g(on)

110

nC

Q

gs

V

GS

= 10 V, V

25

nC

Q

gd

53

nC

R

thJC

1.25

K/W

R

thCK

0.21

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

32

A

I

SM

Repetitive

150

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

T

rr

I

-di/dt = 100 A/

µs

V

Q

RM

250

1.0

ns

µC

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

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